GaN-on-Si Transistors Market by Voltage Range (< 200V, 200V - 600V, and > 600V), by Application (Power Supplies, Radio Frequency (RF) Devices, Light Detection and Ranging (LiDAR), and Power Electronics), and by End User (Consumer Electronics, Automotive, Aerospace and Defense, Telecommunication, Energy & Power, and Others) – Global Opportunity Analysis and Industry Forecast – 2024–2030

GaN-on-Si Transistors Market Overview

The global GaN-on-Si Transistors Market size was valued at USD 12.50 billion in 2023 and is predicted to reach USD 51.74 billion by 2030 with a CAGR of 22.5% from 2024-2030. Gallium Nitride (GaN) market includes development and sale of transistors combined with GaN with Silicon (Si). They are known for their ability to handle high power, high frequencies while operating efficiently in low heat dissipation. These devices have a base in silicon, they are cheaper to make and can be made in larger quantities compared to GaN transistors.

GaN-on-Si transistors are popular for use in consumer electronics, industrial equipment, communication systems, power supply, and electric cars because of their advantages, that encourage the development of faster, more dependable, and efficient technologies. GaN-on-Si transistor acceptability and growth are influenced by a number of factors, including industry regulations, cost competitiveness, performance needs, and technological breakthroughs

Market Dynamics and Trends

The growing demand for the Gan-on-Si transistors in the automotive industry thrives the market for innovative electronic components that enhance efficiency and performance in vehicle electronics, driving advancements in automotive technology. For instance, in August 2023, Gan Systems collaborated with ACEpower to accelerate the extensive adoption of GaN technology in electric vehicles (EV). This collaboration aims to accelerate the GaN-based electric vehicle power market by connecting GaN Systems' cutting-edge power semiconductors, extensive expertise in EV power electronics, and ACEpower's exceptional track record in high-power system design and high-volume manufacturing capabilities.

Moreover, the telecommunications industry is experiencing growth driven by the adoption of GaN-on-Silicon technology. This technology meets the need for increased data-speed and connectivity in 5G applications by providing high-frequency and high-power capabilities. In July 2022, Finwave Semiconductor, a startup company, received a total investment of USD 16.5 million, with USD 12.2 million from Series A funding and an additional USD 4.3 million from U.S. federal funds. This funding supports team expansion and the development of next-generation 3D GaN FinFET technology while optimizing the potential of Gallium Nitride (GaN) for 5G technology.

Additionally, the growing advancement in the Gan technology in terms of better material quality and manufacturing process contributes the GaN-on-Si transistors market growth. For instance, in May 2023 Nexperia launched e-mode 650V, 100V, and 150V GaN field-effect transistors (FETs) and it aims to enhance power conversion efficiency in various sectors such as datacom/telecom, consumer charging, solar, and industrial sector. These applications are boosting demand for Gan-on-Si transistors by enhancing efficiency and performance in high-voltage applications.

However, the high upfront cost and technical challenges such as reliability, thermal management, and integration associated with Gan-on-Si technology are hindering the growth of the market. On the contrary, the increasing adoption of Internet of Things (IoTs) propels the growth for Gan-on-Si transistor industry as compact and power-efficient electronic components including transistors are become increasingly prevalent in the commercial market. As per the McKinsey, the total global impact of IoT technologies projected to generate USD 2.7 trillion by 2025.  The rise of IoT boosts demand for GaN-on-Si transistors as they are essential for their efficiency, high-frequency capabilities, and support for 5G and compact designs in smart devices.

Market Segmentations and Scope of the Study

The Gan-on-Si transistors market report is segmented on the basis of voltage range, applications, end user, and region. On the basis of voltage range, the market is divided into < 200V, 200V - 600V, and > 600V. On the basis of application, the market is classified into power supplies, radio frequency (RF) devices, light detection and ranging (LiDAR), and power electronics. On the basis of end user, the market is classified into, consumer electronics, automotive, aerospace and defense, telecommunication, energy & power, and others. Regional breakdown and analysis of each of the aforesaid segments include regions comprising North America, Europe, Asia-Pacific, and RoW.

Geographical Analysis

Asia-Pacific dominates the Gan-on-Si transistors market share and is expected to continue its dominance during the forecast period. This is attributed to the rising production of electric vehicle (EV) in countries such as China, India and Japan to reduce the energy consumption and increase efficiency in onboard power electronics. As per the report published by India Brand Equity Foundation, in India the total number of passenger vehicles, two-wheelers, surged by 23% in January 2024 compared to December 2023. The rise in production across various vehicle categories is driving the Gan-on-Si industry.

Moreover, the presence of prominent market players such as GaN System, Epistar Corporation, and others are adopting various market strategies such as collaboration and product launches to boost the market growth in this region. For instance, in September 2023, GaN Systems launched 4th generation Gan-on-Si platform to revolutionize power markets across various industries, including consumer electronics, data centers, solar energy, industrial applications, and automotive. The advanced GaN-on-Si platforms are boosting the  market with efficient, compact, and high-performance power solutions.

On the other hand, North America is considered fastest growing region in the Gan-on-Si transistors industry. This is owing to the factor such as growing telecommunication sector in countries including the U.S. and Canada that are investing in R&D for the advancement of amplifiers and radio frequency (RF) micro devices. As per National Telecommunications and Information Administration (NTIA) 2024, the Department of Commerce's NTIA announced to invest USD 420 million in funding for the development of radio equipment that are necessary to promote the adoption of open networks in both the U. S. and internationally. 

Furthermore, the major companies in countries such as the U.S. and Canada are expanding into the military and defense sectors to promote the adoption of GaN technology. This initiative aims to enhance the capabilities of military radars and defense systems by integrating high-power amplifying radio frequency signals operating at microwave frequencies. For instance, in January 2023, Raytheon expanded its semiconductor foundry’s process to produce military-grade with GaN. The improved GaN, produced under the Defense Production Act Title III contract, performs better and costs efficient than other models.

Competitive Landscape

The Gan-on-Si transistors industry comprises of various market players that includes Wolfspeed Inc., Qorvo Inc., MACOM Technology Solutions, Infineon Technologies AG, Sumitomo Corporation, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation., Odyssey Semiconductor Technologies Inc., ROHM CO., LTD., STMicroelectronics N.V., and others. These market players are adopting various strategies such as product launch and acquisition to maintain their dominance in the industry.

For instance, in March 2023, Infineon acquired GaN Systems for USD 830 million that helps in the expansion of the company’s leading position in power semiconductors and considerably speeds up time-to-market.

Also, in June 2022, GaN Systems launched a new transistor in the industry’s broadest portfolio of Gan-on-Si transistors. The GS-065-018-2-L helps in expanding company’s high-performance, low-cost transistor portfolio and provide lower on-resistance, increased robustness and thermal performance.

Key Benefits

• The report provides quantitative analysis and estimations of the Gan-on-Si transistors market from 2024 to 2030, which assists in identifying the prevailing market opportunities.

• The study comprises a deep-dive analysis of the current and future Gan-on-Si transistors market trends to depict prevalent investment pockets in the market.

• Information related to key drivers, restraints, and opportunities and their impact on the Gan-on-Si transistors market is provided in the report.

• Competitive analysis of the key players, along with their market share is provided in the report.

• SWOT analysis and Porters Five Forces model is elaborated in the study.

• Value chain analysis in the market study provides a clear picture of roles of stakeholders

GaN-on-Si Transistors Market Key Segments

By Voltage Range

• < 200V

• 200V - 600V

• 600V 

By Application 

• Power Supplies

• Radio Frequency (RF) Devices

• Light Detection and Ranging (LiDAR)

• Power Electronics

By End User

• Consumer Electronics

• Automotive

• Aerospace and Defense

• Telecommunication

• Energy & Power

• Others

By Region

• North America

  • The U.S.

  • Canada

  • Mexico

• Europe

  • The UK

  • Germany

  • France        

  • Italy        

  • Spain        

  • Denmark        

  • Netherlands        

  • Finland        

  • Sweden        

  • Norway        

  • Russia        

  • Rest of Europe    

• Asia-Pacific

  • China

  • Japan

  • India

  • South Korea

  • Australia

  • Indonesia

  • Singapore

  • Taiwan

  • Thailand

  • Rest of Asia Pacific

• RoW

  • Latin America

  • Middle East

  • Africa

REPORT SCOPE AND SEGMENTATION:

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