GaN Power Transistors Market

GaN Power Transistors Market Overview

The global GaN Power Transistors Market size was valued at USD 299.5 million in 2023 and is predicted to reach USD 2006.1 million by 2030 with a CAGR of 31.2% from 2024-2030. The GaN power transistor involves the global development, manufacturing, and commercialization of high-performance gallium nitride (GaN) transistors, which are used in a variety of power electronics applications. These transistors offer superior characteristics compared to traditional silicon-based transistors, including faster switching speeds, higher power densities, and improved efficiency, making them ideal for use in telecommunications, power supplies, electric vehicles, and renewable energy systems.

The wide bandgap of GaN enables efficient power handling at higher voltages, enhancing reliability in high-power applications, while its excellent thermal conductivity ensures effective heat dissipation and contributes to enhanced device reliability. As the global demand for energy-efficient and high-performance power solutions continues to rise, the GaN power transistor market trend is poised for robust expansion, reshaping the landscape of power electronics.

Market Dynamics and Trends

The rising adoption of GaN transistors in the automotive, particularly in electric vehicles (EVs), boost the market growth as it features advantages such as size and weight reduction, increased efficiency thermal management, and others. Due to these characteristics, GaN transistors are useful in the electric vehicle power train, onboard chargers, and power control systems to improve the performance and effectiveness in those applications. 

According to the report of the International Energy Agency, the sales of electric cars have reached 13 million. In 2023, it will produce 80 million units as compared to 10. 20 million units by 2022 and this indicates the growing trend and the expansion of the market for electric cars globally.

Also, the increasing adoption of energy-efficient applications is benefiting the market for GaN power transistors as they meet energy saving standards. Moreover, this transition to higher efficiency of GaN transistors also contributes to the global environmental goals and paves way for the growth of sustainable eco-friendly technologies which in turn promotes the market for GaN power transistors.

For instance, in September 2023 Philips introduced the 17W and 26W LED bulbs that incorporate a built-in GaN-based driver, which makes it possible to dispense with an extra power supply. This innovative design eliminates some of the technical problems of using ornamented glasswork in high power LED bulb applications, which increases production affordability, power, and efficiency of LED lighting. 

Moreover, the rising use of GaN power transistors in aerospace and defense industries along with companies aiming at building the next generation of radio and satellite-aided radar systems, increasing bandwidth and communications and superior electronic warfare countermeasures are elevating the market growth. 

In December 2023, The Ministry of Defence in India entered into a contract for developing Indigenously manufactured advanced Gallium Nitride (Gan) semiconductors with Agnit Semiconductors Private Ltd for next-gen wireless transmitters in radar, EW jammer and other applications.

This action improves the defense industry of the country and enhances India’s role in global markets as a leader in this vital technological sector.However, high manufacturing costs and complexity related with the GaN power transistors is restraining the overall growth of the market. On the other hand, the integration of cutting-edge technologies, including AI (Artificial Intelligence) into GaN power transistors is poised to bring growth opportunities to the market.

For example, in May 2024 Infineon Technologies AG announced its initiative to introduce energy efficient power supply units (PSUs) tailored for artificial intelligence (AI) data centers. Drawing on its semiconductor material expertise the company developed a range of PSUs from 3 kilowatts (kW) to 12 kW by combining silicon (Si) silicon carbide (SiC) and gallium nitride (GaN) technologies, into a single module.

Market Segmentations and Scope of the Study

The GaN power transistors market share is segmented on the basis of device, voltage rating, application type, end user, and geography. On the basis of device, the market is divided into opto-semiconductors, rf-semiconductors, and power-semiconductors. On the basis of voltage rating, the market is categorised into low voltage, medium voltage and high voltage. On the basis of application type, the market is classified into rf power amplifier, microwaves, rader sensing equipment, tactical radios, communications satellites equipment, motor driver, and others. On the basis of end-user, the market is bifurcated into automotive, aerospace & defence, telecommunication, energy & power, and others. Geographic breakdown and analysis of each of the aforesaid segments include regions comprising North America, Europe, Asia-Pacific, and RoW.

Geographical Analysis

North-America holds the dominant share in GaN power transistors market and is expected to continue its dominance during the forecast period. This is attributed to the factor such as growing initiative by the government associations in countries including U.S and Canada to integrate GaN powered devices in electric vehicles (EV) and hybrid electric vehicles (HEVs).

For example, the U.S. federal government launched a plan for electric vehicle charging to support long-term and comprehensive efforts to accelerate the application of electric drive vehicles all over the United States. This notably includes the creation of a Joint Office of Energy and Transportation charged with formulating guidance and standards for EV charging infrastructure and setting a goal for 50% of new vehicle sales by 2030 to be EV.

In addition, leading companies are employing a range of business tactics such as introducing products to boost market growth. In November 2023, Texas Instruments rolls out their low power gallium nitride (GaN) portfolio for AC/DC power adapters. 

This innovation makes it possible to be up to 50% smaller. Deliver an efficiency of 94 95%, and with a linear regulator tool set integrated, streamline the design. The company’s desire for the benefits of this technology to be more widely available, for use in consumer and industrial sectors, is the reason why it is continuing with its long history of investment in GaN manufacturing.

On the other hand, the Asia-Pacific region is forecasted to be the fastest-growing region in the gallium nitride power transistors market, mainly due to the growth in the consumer electronics sector in countries such as China, Japan, and India. For example, Nanoscience Technology, a China-based company manufactured 8-inch GaN-on-Si FETs, expanded its business in February 2022 to enter international markets.

Furthermore, the automotive industry is witnessing a major increase in electric vehicle (EV) production and with that an increased need for GaN power transistors. These transistors are favored in EV powertrains for their exceptional efficiency and power density, positioning them as vital components in the growing EV sector. The International Energy Agency's report highlights a notable increase in annual electric car sales, with figures rising from 48,023 units in 2022 to 82,270 units in 2023, underscoring the rapid expansion and rising appeal of electric vehicles in India.

Competitive Landscape

Various key players in the GaN power transistors industry includes Efficient Power Conversion Corporation, Fujitsu Limited, Gan Systems Inc., Infineon Technologies Ag, Qorvo Inc, Panasonic Corporation, Taiwan Semiconductor Manufacturing Company Ltd, Texas Instruments Inc., Toshiba Corporation, Wolfspeed Inc, and others. These market players are adopting various strategies such as product launches, collaboration, and acquisition to maintain their dominance in the market.

For example, in March 2024, Fujitsu developed the X-band power amplifier with the highest output for using in the long-range wireless communication and radar. This achievement was achieved by improving the quality of the thin layer of protective film employed in High Electron Mobility Transistor (HEMT) devices that utilizes GaN material.

Also, in March 2023, Infineon Technologies, a global semiconductor player acquired GaN Systems, a Canadian company and a global technology leader in gallium nitride (GaN) power conversion solutions. The acquisition was valued at USD 830 million which significantly accelerate Infineon's GaN roadmap and strengthen its leadership in Power Systems.

Moreover, in August 2022, Qorvo launched a compact, three-stage power solution for phased array radar systems that simplifies manufacturing and improves performance. This includes a configurable GaN bias point auto-calibration system that enables engineers to optimize system performance with a wide range of GaN power amplifiers without redesigning the board.

Key Benefits

• The report provides quantitative analysis and estimations of the GaN power transistors market from 2024 to 2030, which assists in identifying the prevailing industry opportunities.

• The study comprises a deep dive analysis of the current and future GaN power transistors market to depict prevalent investment pockets in the industry.

• Information related to key drivers, restraints, and opportunities and their impact on the market is provided in the report. 

• Competitive analysis of the key players, along with their market share is provided in the report.

• SWOT analysis and Porters Five Forces model is elaborated on  the study.

• Value chain analysis in the GaN power transistors market study provides a clear picture of roles of stakeholders.

GaN Power Transistors Market Key Segments

By Device

• Opto- Semiconductors

• RF-Semiconductors 

• Power-Semiconductors

By Voltage Rating

• Low Voltage

• Medium Voltage

• High Voltage

By Application 

• RF Power Amplifier

• Microwaves

• Rader Sensing Equipment 

• Tactical Radios

• Communications Satellites Equipment

• Motor Driver 

• Others 

By End User

• Automotive 

• Aerospace & Defence

• Telecommunication 

• Energy & Power 

• Others 

By Region

• North America

  • The U.S.

  • Canada

  • Mexico

• Europe

  • The UK

  • Germany

  • France        

  • Italy        

  • Spain        

  • Denmark        

  • Netherlands        

  • Finland        

  • Sweden        

  • Norway        

  • Russia        

  • Rest of Europe    

• Asia-Pacific

  • China

  • Japan

  • India

  • South Korea

  • Australia

  • Indonesia

  • Singapore

  • Taiwan

  • Thailand

  • Rest of Asia Pacific

• RoW

  • Latin America

  • Middle East

  • Africa

REPORT SCOPE AND SEGMENTATION:

Parameters	Details
Market Size in 2023	USD 299.5 Million
Revenue Forecast in 2030	USD 2006.1 Million
Growth Rate	CAGR of 31.2% from 2023 to 2030
Analysis Period	2023–2030
Base Year Considered	2023
Forecast Period	2024–2030
Market Size Estimation	Billion (USD)
Growth Factors	Rising adoption of GaN power transistors in the automotive industry is driving the market expansion. Increasing demand of GaN power transistors in the aerospace and defense sectors propels the market. Growing demand for energy-efficient technologies is fueling the market for GaN power transistors.
Countries Covered	28
Companies Profiled	10
Market Share	Available for 10 companies
Customization Scope	Free customization (equivalent up to 80 working hours of analysts) after purchase. Addition or alteration to country, regional, and segment scope.
Pricing and Purchase Options	Avail customized purchase options to meet your exact research needs.

KEY PLAYERS

• Efficient Power Conversion Corporation

• Fujitsu Limited

• Gan Systems Inc.

• Infineon Technologies Ag

• Qorvo Inc.

• Panasonic Corporation

• Taiwan Semiconductor Manufacturing Company Ltd.

• Texas Instruments Inc.

• Toshiba Corporation 

• Wolfspeed Inc.