Silicon Carbide (SiC) MOSFET Market

Market Definition

The Silicon Carbide (SiC) MOSFET Market size was valued at USD XX billion in 2020 and is predicted to reach USD XX billion by 2030 with a CAGR of XX% from 2021-2030. 

Silicon carbide MOSFETs outperform conventional silicon power MOSFETs in terms of dynamic and thermal performance. It has several advantages, including high efficiency and low switching losses, improved thermal capabilities up to 175 degrees Celsius, and the elimination of the need for an external freewheeling diode. Silicon carbide MOSFETs eliminate tail current, resulting in faster operation, lower switching losses, and improved stability.

Silicon carbide has a lower ON resistance and smaller chip size, which results in less capacitance and gate charge. Silicon carbide MOSFETs are an appealing electronic switch for innovative power supply and motor drive solutions including industrial equipment, electric vehicles, power, solar and wind sectors.

Market Dynamics and Trends:

Silicon carbide MOSFET is perfectly suited for power electronics applications, due to its ability to withstand high voltages, up to ten times higher than those used with silicon. Thus, increasing need for power electronics across several industry verticals such as IT & telecom, aerospace & defense, industrial, energy & power, semiconductor & electronics, automotive, and healthcare among others is the key factor driving the silicon carbide (SiC) MOSFET market.

Power electronics ensure that electrical power is effectively and efficiently controlled and converted. Silicon carbide power semiconductors, make it easier to manage automotive electronics like electric brakes, power steering, and seat control in hydroelectric vehicles. These devices are also used in aircraft actuators and generators for energy conversion.

However, the high material and fabrication costs of silicon carbide (SiC) MOSFET are expected to restrain the growth of the market during the forecast period. On the contrary, silicon carbide (SiC) MOSFET is one of the few compound semiconductors being evaluated for the manufacturing of power semiconductors for 5G communication equipment. These factors are expected to create ample growth opportunities for the market in the coming years.

Market Segmentations and Scope of the Study:

The silicon carbide (SiC) MOSFET market is segmented on the basis of type, voltage range, vertical, and geography. On the basis of type, the market is divided into SiC discrete (chips and devices) and SiC module. On the basis of voltage range, the market is classified into -40V to 100V, 101V to 300V, 301V to 900V, 901V to 1500V, and 1501V to 4700V. On the basis of vertical, the market is segmented into energy and power, automotive {electric vehicle and hybrid electric vehicle}, consumer electronics {smartphone, camera, laptop, audio & video device, and other home appliances}, renewable power generation {wind turbine and solar power system}, defense, telecom, and Datacom, industrial {motor drives, ups, others}, healthcare, and other verticals. Geographic breakdown and analysis of each of the aforesaid segments include regions comprising of North America, Europe, Asia-Pacific, and RoW.

Geographical Analysis:

Asia Pacific held the largest revenue share of the global silicon carbide (SiC) MOSFET market in 2020, and the trend is expected to continue during the forecast period. The increasing adoption of the electric vehicle is driving the growth of the market as silicon carbide MOSFET chips are extensively used in electric vehicle inverters and on-board chargers due to its higher efficiency, frequency and compact size compared to silicon-based insulated-gate bipolar transistors (IGBTs). According to the IEA outlook 2020 report, China accounted for 47% share of the global electric buses sales in 2019, which significantly contributed towards the dominance of the APAC region among all other regions. Moreover, several countries in this region have been taking steps to promote the use of alternate fuel vehicles to reduce carbon footprint.

Asia Pacific region is also anticipated to grow at the highest CAGR during the forecast period.  This is mainly attributed to the increased use of silicon carbides (SiC) MOSFET devices in the automotive, power electronics, energy, and renewable power generation verticals across the region.  In addition, India Electronics and Semiconductor Association (IESA) and the Singapore Semiconductor Industry Association (SSIA) signed a Memorandum of Understanding (MoU) to establish and develop trade and technical cooperation between the two countries' electronics and semiconductor industries. This is expected to result in the development of several breakthrough semiconductor manufacturing technologies, which may expand the scope for the use of silicon carbides (SiC) MOSFET in the region.

Competitive Landscape:

The silicon carbide (SiC) MOSFET market is comprising of various market players such as Infineon Technologies, Cree, Inc., ROHM Co., Ltd., STMelectronics, Fuji Electric, Semiconductor Components Industries, LLC, ON Semiconductor, General Electric, Wolfspeed, Renesas Electronics. Other players operating in this market include Microchip Technology, Jilin Sino Microelectronics, Silan Microelectronics, CRMicro, SiEn (Qingdao), and Semiconductor corporation Co. Ltd.

These market players are adopting various growth strategies, such as new product launches to further expand their presence in the silicon carbide (SiC) MOSFET market and broaden their customer base. For instance, in May 2020, Infineon Technologies (Germany) launched CoolSiC MOSFET 1700 V SMD. The CoolSiC MOSFET's new voltage class provides greater reliability as well as low switching and conduction losses. Also, in March 2020, SK Siltron, a global maker of semiconductor wafers, announced that it had completed the acquisition of DuPont's Silicon Carbide Wafer unit.

KEY BENEFITS:

• The silicon carbide (SiC) MOSFET market report provides the quantitative analysis of the current market and estimations through 2021-2030 that assists in identifying the prevailing market opportunities to capitalize on.

• The study comprises a deep dive analysis of the silicon carbide (SiC) MOSFET market trend including the current and future trends for depicting the prevalent investment pockets in the market.

• The information related to key drivers, restraints, and opportunities and their impact on the silicon carbide (SiC) MOSFET market is provided in the report.

• The competitive analysis of the market players along with their market share in the silicon carbide (SiC) MOSFET market.

• The SWOT analysis and Porter's Five Forces model are elaborated in the study.

• Value chain analysis in the market study provides a clear picture of the stakeholders’ roles.

KEY MARKET SEGMENTS:

By Type

• SiC Discrete (Chips and Devices)

• SiC Module

By Voltage Range

• -40V to 100V

• 101V to 300V

• 301V to 900V

• 901V to 1500V

• 1501V to 4700V

By Vertical

• Energy and Power

• Automotive

  • Electric Vehicle

  • Hybrid Electric Vehicle

• Consumer Electronics

  • Smartphone

  • Camera

  • Laptop

  • Audio & Video Device

• Other Home Appliances

  • Renewable Power Generation

    • Wind Turbine

    • Solar Power System

  • Defense

  • Telecom and Datacom

  • Industrial

    • Motor Drives

    • UPS

    • Others

  • Healthcare

  • Other Verticals

By Geography

• North America

  • U.S

  • Canada

  • Mexico

• Europe

  • UK

  • Germany

  • France

  • Italy

  • Spain

  • Rest of Europe

• Asia-Pacific

  • China

  • India

  • Japan

  • South Korea

  • Australia

  • Rest of Asia-Pacific

• RoW

  • UAE

  • Saudi Arabia

  • South Africa

  • Brazil

  • Remaining Countries

KEY PLAYERS

• Infineon Technologies
• Cree, Inc.
• ROHM Co., Ltd.
• STMelectronics
• Fuji Electric
• Semiconductor Components Industries, LLC
• ON Semiconductor
• General Electric
• Wolfspeed
• Renesas Electronics
• Microchip Technology
• Jilin Sino Microelectronics
• Silan Microelectronics
• CRMicro
• SiEn (Qingdao) Semiconductor corporation Co., Ltd

REPORT SCOPE AND SEGMENTATION: